Growth of Highly-Ordered-Crystalline Indium-Gallium-Oxide Thin-Film via Plasma-Enhanced ALD for High Performance Top-Gate Field-Effect Transistors.
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| Title: | Growth of Highly-Ordered-Crystalline Indium-Gallium-Oxide Thin-Film via Plasma-Enhanced ALD for High Performance Top-Gate Field-Effect Transistors. |
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| Authors: | Kim MJ; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Bang SW; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Hur JS; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Yoon SH; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Choi CH; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Chung SW; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Oh JE; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Kim Y; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Park BJ; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Lee J; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Yang H; Department of Chemical Engineering, Inha University, Incheon, 22212, Republic of Korea., Ha D; Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea., Cho MH; Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea., Jeong JK; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea. |
| Source: | Small methods [Small Methods] 2025 Jul; Vol. 9 (7), pp. e2402070. Date of Electronic Publication: 2024 Dec 30. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: WILEY-VCH Verlag GmbH & Co. KGaA Country of Publication: Germany NLM ID: 101724536 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 2366-9608 (Electronic) Linking ISSN: 23669608 NLM ISO Abbreviation: Small Methods Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 39737791 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Growth of Highly-Ordered-Crystalline Indium-Gallium-Oxide Thin-Film via Plasma-Enhanced ALD for High Performance Top-Gate Field-Effect Transistors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Kim+MJ%22">Kim MJ</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Bang+SW%22">Bang SW</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hur+JS%22">Hur JS</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yoon+SH%22">Yoon SH</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Choi+CH%22">Choi CH</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Chung+SW%22">Chung SW</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Oh+JE%22">Oh JE</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+Y%22">Kim Y</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Park+BJ%22">Park BJ</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+J%22">Lee J</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yang+H%22">Yang H</searchLink>; Department of Chemical Engineering, Inha University, Incheon, 22212, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Ha+D%22">Ha D</searchLink>; Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Cho+MH%22">Cho MH</searchLink>; Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jeong+JK%22">Jeong JK</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101724536%22">Small methods</searchLink> [Small Methods] 2025 Jul; Vol. 9 (7), pp. e2402070. <i>Date of Electronic Publication: </i>2024 Dec 30. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22WILEY-VCH+Verlag+GmbH+%26+Co%2E+KGaA%22">WILEY-VCH Verlag GmbH & Co. KGaA </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>101724536 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2366-9608 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2223669608%22">23669608 </searchLink><i>NLM ISO Abbreviation: </i>Small Methods <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=39737791 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/smtd.202402070 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: e2402070 Titles: – TitleFull: Growth of Highly-Ordered-Crystalline Indium-Gallium-Oxide Thin-Film via Plasma-Enhanced ALD for High Performance Top-Gate Field-Effect Transistors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kim MJ – PersonEntity: Name: NameFull: Bang SW – PersonEntity: Name: NameFull: Hur JS – PersonEntity: Name: NameFull: Yoon SH – PersonEntity: Name: NameFull: Choi CH – PersonEntity: Name: NameFull: Chung SW – PersonEntity: Name: NameFull: Oh JE – PersonEntity: Name: NameFull: Kim Y – PersonEntity: Name: NameFull: Park BJ – PersonEntity: Name: NameFull: Lee J – PersonEntity: Name: NameFull: Yang H – PersonEntity: Name: NameFull: Ha D – PersonEntity: Name: NameFull: Cho MH – PersonEntity: Name: NameFull: Jeong JK IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: 2025 Jul Type: published Y: 2025 Identifiers: – Type: issn-electronic Value: 2366-9608 Numbering: – Type: volume Value: 9 – Type: issue Value: 7 Titles: – TitleFull: Small methods Type: main |
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