APA (7th ed.) Citation

VA, T., IV, S., VI, M., AA, B., ID, L., VV, K., . . . KA, L. (2025). Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers. Nanotechnology, 36(13), . https://doi.org/10.1088/1361-6528/ada9a6

Chicago Style (17th ed.) Citation

VA, Timofeev, Skvortsov IV, Mashanov VI, Bloshkin AA, Loshkarev ID, Kirienko VV, Zalyalov TM, and Lozovoy KA. "Infrared Photoresponse of GeSiSn P-i-n Photodiodes Based on Quantum Dots, Quantum Wells, Pseudomorphic and Relaxed Layers." Nanotechnology 36, no. 13 (2025). https://doi.org/10.1088/1361-6528/ada9a6.

MLA (9th ed.) Citation

VA, Timofeev, et al. "Infrared Photoresponse of GeSiSn P-i-n Photodiodes Based on Quantum Dots, Quantum Wells, Pseudomorphic and Relaxed Layers." Nanotechnology, vol. 36, no. 13, 2025, https://doi.org/10.1088/1361-6528/ada9a6.