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Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.

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Title: Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.
Authors: Timofeev VA; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Skvortsov IV; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Mashanov VI; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Bloshkin AA; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Loshkarev ID; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Kirienko VV; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Zalyalov TM; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Lozovoy KA; Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin Avenue, Tomsk 634050, Russia.
Source: Nanotechnology [Nanotechnology] 2025 Feb 04; Vol. 36 (13). Date of Electronic Publication: 2025 Feb 04.
Publication Type: Journal Article
Journal Info: Publisher: IOP Pub Country of Publication: England NLM ID: 101241272 Publication Model: Electronic Cited Medium: Internet ISSN: 1361-6528 (Electronic) Linking ISSN: 09574484 NLM ISO Abbreviation: Nanotechnology Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.
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  Data: <searchLink fieldCode="AU" term="%22Timofeev+VA%22">Timofeev VA</searchLink>; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia.<br /><searchLink fieldCode="AU" term="%22Skvortsov+IV%22">Skvortsov IV</searchLink>; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia.<br /><searchLink fieldCode="AU" term="%22Mashanov+VI%22">Mashanov VI</searchLink>; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia.<br /><searchLink fieldCode="AU" term="%22Bloshkin+AA%22">Bloshkin AA</searchLink>; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia.<br /><searchLink fieldCode="AU" term="%22Loshkarev+ID%22">Loshkarev ID</searchLink>; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia.<br /><searchLink fieldCode="AU" term="%22Kirienko+VV%22">Kirienko VV</searchLink>; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia.<br /><searchLink fieldCode="AU" term="%22Zalyalov+TM%22">Zalyalov TM</searchLink>; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia.<br /><searchLink fieldCode="AU" term="%22Lozovoy+KA%22">Lozovoy KA</searchLink>; Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin Avenue, Tomsk 634050, Russia.
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  Data: <searchLink fieldCode="JN" term="%22101241272%22">Nanotechnology</searchLink> [Nanotechnology] 2025 Feb 04; Vol. 36 (13). <i>Date of Electronic Publication: </i>2025 Feb 04.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22IOP+Pub%22">IOP Pub </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101241272 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1361-6528 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209574484%22">09574484 </searchLink><i>NLM ISO Abbreviation: </i>Nanotechnology <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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              Text: 2025 Feb 04
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