Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers.
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| Title: | Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers. |
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| Authors: | Timofeev VA; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Skvortsov IV; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Mashanov VI; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Bloshkin AA; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Loshkarev ID; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Kirienko VV; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Zalyalov TM; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia., Lozovoy KA; Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin Avenue, Tomsk 634050, Russia. |
| Source: | Nanotechnology [Nanotechnology] 2025 Feb 04; Vol. 36 (13). Date of Electronic Publication: 2025 Feb 04. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: IOP Pub Country of Publication: England NLM ID: 101241272 Publication Model: Electronic Cited Medium: Internet ISSN: 1361-6528 (Electronic) Linking ISSN: 09574484 NLM ISO Abbreviation: Nanotechnology Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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