APA (7th ed.) Citation

M, L., P, Z., H, H., YC, J., JH, K., N, H., . . . J, K. (2025). Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing. Nano letters, 25(5), 1831. https://doi.org/10.1021/acs.nanolett.4c04771

Chicago Style (17th ed.) Citation

M, Lee, et al. "Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing." Nano Letters 25, no. 5 (2025): 1831. https://doi.org/10.1021/acs.nanolett.4c04771.

MLA (9th ed.) Citation

M, Lee, et al. "Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing." Nano Letters, vol. 25, no. 5, 2025, p. 1831, https://doi.org/10.1021/acs.nanolett.4c04771.