Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing.

Saved in:
Bibliographic Details
Title: Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing.
Authors: Lee M; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Zhou P; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Hernandez-Arriaga H; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Jung YC; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Kim JH; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Hassan N; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Brigner WH; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Deremo L; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Friedman JS; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Kim J; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Source: Nano letters [Nano Lett] 2025 Feb 05; Vol. 25 (5), pp. 1831-1837. Date of Electronic Publication: 2025 Jan 23.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
FullText Text:
  Availability: 0
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 39848620
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Cross-Point Ferroelectric Hf<subscript>0.5</subscript>Zr<subscript>0.5</subscript>O<subscript>2</subscript> Capacitors for Remanent Polarization-Driven In-Memory Computing.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Lee+M%22">Lee M</searchLink>; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.<br /><searchLink fieldCode="AU" term="%22Zhou+P%22">Zhou P</searchLink>; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.<br /><searchLink fieldCode="AU" term="%22Hernandez-Arriaga+H%22">Hernandez-Arriaga H</searchLink>; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.<br /><searchLink fieldCode="AU" term="%22Jung+YC%22">Jung YC</searchLink>; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.<br /><searchLink fieldCode="AU" term="%22Kim+JH%22">Kim JH</searchLink>; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.<br /><searchLink fieldCode="AU" term="%22Hassan+N%22">Hassan N</searchLink>; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.<br /><searchLink fieldCode="AU" term="%22Brigner+WH%22">Brigner WH</searchLink>; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.<br /><searchLink fieldCode="AU" term="%22Deremo+L%22">Deremo L</searchLink>; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.<br /><searchLink fieldCode="AU" term="%22Friedman+JS%22">Friedman JS</searchLink>; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.<br /><searchLink fieldCode="AU" term="%22Kim+J%22">Kim J</searchLink>; Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101088070%22">Nano letters</searchLink> [Nano Lett] 2025 Feb 05; Vol. 25 (5), pp. 1831-1837. <i>Date of Electronic Publication: </i>2025 Jan 23.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101088070 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1530-6992 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2215306984%22">15306984 </searchLink><i>NLM ISO Abbreviation: </i>Nano Lett <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=39848620
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1021/acs.nanolett.4c04771
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 1831
    Titles:
      – TitleFull: Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Lee M
      – PersonEntity:
          Name:
            NameFull: Zhou P
      – PersonEntity:
          Name:
            NameFull: Hernandez-Arriaga H
      – PersonEntity:
          Name:
            NameFull: Jung YC
      – PersonEntity:
          Name:
            NameFull: Kim JH
      – PersonEntity:
          Name:
            NameFull: Hassan N
      – PersonEntity:
          Name:
            NameFull: Brigner WH
      – PersonEntity:
          Name:
            NameFull: Deremo L
      – PersonEntity:
          Name:
            NameFull: Friedman JS
      – PersonEntity:
          Name:
            NameFull: Kim J
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 05
              M: 02
              Text: 2025 Feb 05
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-electronic
              Value: 1530-6992
          Numbering:
            – Type: volume
              Value: 25
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Nano letters
              Type: main
ResultId 1