APA (7th ed.) Citation

E, S., B, S., S, B., F, P., LI, W., F, R., . . . ID, S. (2025). Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films. ACS applied materials & interfaces, 17(5), 7958. https://doi.org/10.1021/acsami.4c16921

Chicago Style (17th ed.) Citation

E, Sirotti, et al. "Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films." ACS Applied Materials & Interfaces 17, no. 5 (2025): 7958. https://doi.org/10.1021/acsami.4c16921.

MLA (9th ed.) Citation

E, Sirotti, et al. "Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films." ACS Applied Materials & Interfaces, vol. 17, no. 5, 2025, p. 7958, https://doi.org/10.1021/acsami.4c16921.