Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films.
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| Title: | Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films. |
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| Authors: | Sirotti E; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Scaparra B; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; TUM School of Computation, Information and Technology, and MCQST, Technical University of Munich, Garching 85748, Germany., Böhm S; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Pantle F; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Wagner LI; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Rauh F; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Munnik F; Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany., Jiang CM; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Kuhl M; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Müller K; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; TUM School of Computation, Information and Technology, and MCQST, Technical University of Munich, Garching 85748, Germany., Eichhorn J; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Streibel V; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Sharp ID; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany. |
| Source: | ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2025 Feb 05; Vol. 17 (5), pp. 7958-7968. Date of Electronic Publication: 2025 Jan 28. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 39871808 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Sirotti+E%22">Sirotti E</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Scaparra+B%22">Scaparra B</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; TUM School of Computation, Information and Technology, and MCQST, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Böhm+S%22">Böhm S</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Pantle+F%22">Pantle F</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Wagner+LI%22">Wagner LI</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Rauh+F%22">Rauh F</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Munnik+F%22">Munnik F</searchLink>; Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany.<br /><searchLink fieldCode="AU" term="%22Jiang+CM%22">Jiang CM</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Kuhl+M%22">Kuhl M</searchLink>; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Müller+K%22">Müller K</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; TUM School of Computation, Information and Technology, and MCQST, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Eichhorn+J%22">Eichhorn J</searchLink>; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Streibel+V%22">Streibel V</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany.<br /><searchLink fieldCode="AU" term="%22Sharp+ID%22">Sharp ID</searchLink>; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2025 Feb 05; Vol. 17 (5), pp. 7958-7968. <i>Date of Electronic Publication: </i>2025 Jan 28. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=39871808 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1021/acsami.4c16921 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: 7958 Titles: – TitleFull: Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Sirotti E – PersonEntity: Name: NameFull: Scaparra B – PersonEntity: Name: NameFull: Böhm S – PersonEntity: Name: NameFull: Pantle F – PersonEntity: Name: NameFull: Wagner LI – PersonEntity: Name: NameFull: Rauh F – PersonEntity: Name: NameFull: Munnik F – PersonEntity: Name: NameFull: Jiang CM – PersonEntity: Name: NameFull: Kuhl M – PersonEntity: Name: NameFull: Müller K – PersonEntity: Name: NameFull: Eichhorn J – PersonEntity: Name: NameFull: Streibel V – PersonEntity: Name: NameFull: Sharp ID IsPartOfRelationships: – BibEntity: Dates: – D: 05 M: 02 Text: 2025 Feb 05 Type: published Y: 2025 Identifiers: – Type: issn-electronic Value: 1944-8252 Numbering: – Type: volume Value: 17 – Type: issue Value: 5 Titles: – TitleFull: ACS applied materials & interfaces Type: main |
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