Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films.
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| Title: | Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films. |
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| Authors: | Sirotti E; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Scaparra B; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; TUM School of Computation, Information and Technology, and MCQST, Technical University of Munich, Garching 85748, Germany., Böhm S; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Pantle F; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Wagner LI; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Rauh F; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Munnik F; Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany., Jiang CM; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Kuhl M; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Müller K; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; TUM School of Computation, Information and Technology, and MCQST, Technical University of Munich, Garching 85748, Germany., Eichhorn J; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Streibel V; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany., Sharp ID; Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.; Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany. |
| Source: | ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2025 Feb 05; Vol. 17 (5), pp. 7958-7968. Date of Electronic Publication: 2025 Jan 28. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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