APA (7th ed.) Citation

T, L., J, L., & J, J. (2025). Flexible Temperature Sensor with 2D In2Se3 Ferroelectric-Semiconductor Field Effect Transistor Exhibiting Record High Sensitivity. Small (Weinheim an der Bergstrasse, Germany), 21(12), e2410853. https://doi.org/10.1002/smll.202410853

Chicago Style (17th ed.) Citation

T, Lim, Lee J, and Jang J. "Flexible Temperature Sensor with 2D In2Se3 Ferroelectric-Semiconductor Field Effect Transistor Exhibiting Record High Sensitivity." Small (Weinheim an Der Bergstrasse, Germany) 21, no. 12 (2025): e2410853. https://doi.org/10.1002/smll.202410853.

MLA (9th ed.) Citation

T, Lim, et al. "Flexible Temperature Sensor with 2D In2Se3 Ferroelectric-Semiconductor Field Effect Transistor Exhibiting Record High Sensitivity." Small (Weinheim an Der Bergstrasse, Germany), vol. 21, no. 12, 2025, p. e2410853, https://doi.org/10.1002/smll.202410853.