Flexible Temperature Sensor with 2D In2Se3 Ferroelectric-Semiconductor Field Effect Transistor Exhibiting Record High Sensitivity.

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Bibliographic Details
Title: Flexible Temperature Sensor with 2D In2Se3 Ferroelectric-Semiconductor Field Effect Transistor Exhibiting Record High Sensitivity.
Authors: Lim T; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea., Lee J; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea., Jang J; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea.
Source: Small (Weinheim an der Bergstrasse, Germany) [Small] 2025 Mar; Vol. 21 (12), pp. e2410853. Date of Electronic Publication: 2025 Feb 11.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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