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Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Based Power Device Applications.

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Title: Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Based Power Device Applications.
Authors: Labed M; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Park BI; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju-si 54896, Republic of Korea., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Park JH; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Min JY; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Jeon HJ; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Rim YS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Source: ACS nano [ACS Nano] 2025 Mar 11; Vol. 19 (9), pp. 8842-8851. Date of Electronic Publication: 2025 Feb 26.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE
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  Data: Transferred Graphene Monolayer to β-Ga<subscript>2</subscript>O<subscript>3</subscript> as a Diffusion Barrier for Based Power Device Applications.
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  Data: <searchLink fieldCode="AU" term="%22Labed+M%22">Labed M</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Park+BI%22">Park BI</searchLink>; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju-si 54896, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+J%22">Kim J</searchLink>; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.<br /><searchLink fieldCode="AU" term="%22Park+JH%22">Park JH</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Min+JY%22">Min JY</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jeon+HJ%22">Jeon HJ</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+J%22">Kim J</searchLink>; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.<br /><searchLink fieldCode="AU" term="%22Rim+YS%22">Rim YS</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
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  Data: <searchLink fieldCode="JN" term="%22101313589%22">ACS nano</searchLink> [ACS Nano] 2025 Mar 11; Vol. 19 (9), pp. 8842-8851. <i>Date of Electronic Publication: </i>2025 Feb 26.
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              Text: 2025 Mar 11
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