APA (7th ed.) Citation

J, B., K, A., M, J., MH, R., JK, S., MRM, A., . . . J, J. (2025). Highly Stable, Crystalline InGaO Thin-Film Transistors by 7% Lanthanum Incorporation. ACS applied materials & interfaces, 17(16), 24116. https://doi.org/10.1021/acsami.5c00858

Chicago Style (17th ed.) Citation

J, Bae, Ahn K, Jeong M, Rabbi MH, Saha JK, Arnob MRM, Lim T, Kim J, and Jang J. "Highly Stable, Crystalline InGaO Thin-Film Transistors by 7% Lanthanum Incorporation." ACS Applied Materials & Interfaces 17, no. 16 (2025): 24116. https://doi.org/10.1021/acsami.5c00858.

MLA (9th ed.) Citation

J, Bae, et al. "Highly Stable, Crystalline InGaO Thin-Film Transistors by 7% Lanthanum Incorporation." ACS Applied Materials & Interfaces, vol. 17, no. 16, 2025, p. 24116, https://doi.org/10.1021/acsami.5c00858.