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Highly Stable, Crystalline InGaO Thin-Film Transistors by 7% Lanthanum Incorporation.

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Title: Highly Stable, Crystalline InGaO Thin-Film Transistors by 7% Lanthanum Incorporation.
Authors: Bae J; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea., Ahn K; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea., Jeong M; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea., Rabbi MH; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea., Saha JK; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea., Arnob MRM; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea., Lim T; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea., Kim J; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea., Jang J; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2025 Apr 23; Vol. 17 (16), pp. 24116-24128. Date of Electronic Publication: 2025 Apr 14.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Availability: 0
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 40228009
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Highly Stable, Crystalline InGaO Thin-Film Transistors by 7% Lanthanum Incorporation.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Bae+J%22">Bae J</searchLink>; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.<br /><searchLink fieldCode="AU" term="%22Ahn+K%22">Ahn K</searchLink>; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.<br /><searchLink fieldCode="AU" term="%22Jeong+M%22">Jeong M</searchLink>; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.<br /><searchLink fieldCode="AU" term="%22Rabbi+MH%22">Rabbi MH</searchLink>; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.<br /><searchLink fieldCode="AU" term="%22Saha+JK%22">Saha JK</searchLink>; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.<br /><searchLink fieldCode="AU" term="%22Arnob+MRM%22">Arnob MRM</searchLink>; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.<br /><searchLink fieldCode="AU" term="%22Lim+T%22">Lim T</searchLink>; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.<br /><searchLink fieldCode="AU" term="%22Kim+J%22">Kim J</searchLink>; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.<br /><searchLink fieldCode="AU" term="%22Jang+J%22">Jang J</searchLink>; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2025 Apr 23; Vol. 17 (16), pp. 24116-24128. <i>Date of Electronic Publication: </i>2025 Apr 14.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=40228009
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1021/acsami.5c00858
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 24116
    Titles:
      – TitleFull: Highly Stable, Crystalline InGaO Thin-Film Transistors by 7% Lanthanum Incorporation.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Bae J
      – PersonEntity:
          Name:
            NameFull: Ahn K
      – PersonEntity:
          Name:
            NameFull: Jeong M
      – PersonEntity:
          Name:
            NameFull: Rabbi MH
      – PersonEntity:
          Name:
            NameFull: Saha JK
      – PersonEntity:
          Name:
            NameFull: Arnob MRM
      – PersonEntity:
          Name:
            NameFull: Lim T
      – PersonEntity:
          Name:
            NameFull: Kim J
      – PersonEntity:
          Name:
            NameFull: Jang J
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 23
              M: 04
              Text: 2025 Apr 23
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-electronic
              Value: 1944-8252
          Numbering:
            – Type: volume
              Value: 17
            – Type: issue
              Value: 16
          Titles:
            – TitleFull: ACS applied materials & interfaces
              Type: main
ResultId 1