APA (7th ed.) Citation

RG, H., MA, K., GS, M., M, N., KBM, I., S, M., & J, K. (2025). Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications. Biomedical microdevices, 27(2), 19. https://doi.org/10.1007/s10544-025-00746-1

Chicago Style (17th ed.) Citation

RG, Hemalatha, Kumar MA, Mishra GS, N. M, Ismail KBM, Mahalingam S, and Kim J. "Design and Simulation of Advanced Boron-doped GaN Cap Layer on AlGaN/GaN MOSHEMTs for Enhanced Label-free Biosensing Applications." Biomedical Microdevices 27, no. 2 (2025): 19. https://doi.org/10.1007/s10544-025-00746-1.

MLA (9th ed.) Citation

RG, Hemalatha, et al. "Design and Simulation of Advanced Boron-doped GaN Cap Layer on AlGaN/GaN MOSHEMTs for Enhanced Label-free Biosensing Applications." Biomedical Microdevices, vol. 27, no. 2, 2025, p. 19, https://doi.org/10.1007/s10544-025-00746-1.