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Low Power Ternary State Channel Computing-in-Memory Transistor for Federated Learning.

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Title: Low Power Ternary State Channel Computing-in-Memory Transistor for Federated Learning.
Authors: Li Z; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Huang X; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Xu L; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Peng Z; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Yu XX; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Shi W; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Lv S; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., He M; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Meng X; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., He X; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Yang G; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Liu G; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Wu J; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Ma C; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Tong L; Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong 999077, China., Miao X; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China., Ye L; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, China.
Source: Nano letters [Nano Lett] 2025 May 21; Vol. 25 (20), pp. 8159-8167. Date of Electronic Publication: 2025 May 12.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: <searchLink fieldCode="AU" term="%22Li+Z%22">Li Z</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Huang+X%22">Huang X</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Xu+L%22">Xu L</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Peng+Z%22">Peng Z</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Yu+XX%22">Yu XX</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Shi+W%22">Shi W</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Lv+S%22">Lv S</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22He+M%22">He M</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Meng+X%22">Meng X</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22He+X%22">He X</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Yang+G%22">Yang G</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Liu+G%22">Liu G</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Wu+J%22">Wu J</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Ma+C%22">Ma C</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Tong+L%22">Tong L</searchLink>; Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong 999077, China.<br /><searchLink fieldCode="AU" term="%22Miao+X%22">Miao X</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.<br /><searchLink fieldCode="AU" term="%22Ye+L%22">Ye L</searchLink>; School of Integrated Circuits and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, China.
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