Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors.
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| Title: | Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors. |
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| Authors: | Son H; Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea., Sim K; Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea., Hwang HC; National NanoFab Center, Daejeon 34141, Republic of Korea., Park H; Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea. |
| Source: | Nanotechnology [Nanotechnology] 2025 Sep 30; Vol. 36 (40). Date of Electronic Publication: 2025 Sep 30. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: IOP Pub Country of Publication: England NLM ID: 101241272 Publication Model: Electronic Cited Medium: Internet ISSN: 1361-6528 (Electronic) Linking ISSN: 09574484 NLM ISO Abbreviation: Nanotechnology Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 40967244 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Son+H%22">Son H</searchLink>; Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Sim+K%22">Sim K</searchLink>; Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hwang+HC%22">Hwang HC</searchLink>; National NanoFab Center, Daejeon 34141, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Park+H%22">Park H</searchLink>; Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101241272%22">Nanotechnology</searchLink> [Nanotechnology] 2025 Sep 30; Vol. 36 (40). <i>Date of Electronic Publication: </i>2025 Sep 30. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22IOP+Pub%22">IOP Pub </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101241272 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1361-6528 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209574484%22">09574484 </searchLink><i>NLM ISO Abbreviation: </i>Nanotechnology <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=40967244 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1088/1361-6528/ae08bf Languages: – Code: eng Text: English Titles: – TitleFull: Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Son H – PersonEntity: Name: NameFull: Sim K – PersonEntity: Name: NameFull: Hwang HC – PersonEntity: Name: NameFull: Park H IsPartOfRelationships: – BibEntity: Dates: – D: 30 M: 09 Text: 2025 Sep 30 Type: published Y: 2025 Identifiers: – Type: issn-electronic Value: 1361-6528 Numbering: – Type: volume Value: 36 – Type: issue Value: 40 Titles: – TitleFull: Nanotechnology Type: main |
| ResultId | 1 |
