APA (7th ed.) Citation

B, C., PL, K., M, T., M, L., C, U., DA, R., . . . MC, H. (2025). Terahertz-Induced Tunnel Ionization Drives Coherent Raman-Active Phonon in Bismuth. Physical review letters, 135(14), 146901. https://doi.org/10.1103/ttwf-qgz4

Chicago Style (17th ed.) Citation

B, Cheng, Kramer PL, Trigo M, Liu M, Uher C, Reis DA, Shen ZX, Sobota JA, and Hoffmann MC. "Terahertz-Induced Tunnel Ionization Drives Coherent Raman-Active Phonon in Bismuth." Physical Review Letters 135, no. 14 (2025): 146901. https://doi.org/10.1103/ttwf-qgz4.

MLA (9th ed.) Citation

B, Cheng, et al. "Terahertz-Induced Tunnel Ionization Drives Coherent Raman-Active Phonon in Bismuth." Physical Review Letters, vol. 135, no. 14, 2025, p. 146901, https://doi.org/10.1103/ttwf-qgz4.