APA (7th ed.) Citation

TT, S., PK, W., L, C., SS, C., MS, W., & WP, H. (2026). Efficient Dark Current Suppression by Engineering PIET-Active Discrete Donor-Acceptor Architecture for High-Sensitivity Semiconductor Photodetectors. Advanced materials (Deerfield Beach, Fla.), 38(5), e15057. https://doi.org/10.1002/adma.202515057

Chicago Style (17th ed.) Citation

TT, Song, Wang PK, Chen L, Cheng SS, Wang MS, and Hu WP. "Efficient Dark Current Suppression by Engineering PIET-Active Discrete Donor-Acceptor Architecture for High-Sensitivity Semiconductor Photodetectors." Advanced Materials (Deerfield Beach, Fla.) 38, no. 5 (2026): e15057. https://doi.org/10.1002/adma.202515057.

MLA (9th ed.) Citation

TT, Song, et al. "Efficient Dark Current Suppression by Engineering PIET-Active Discrete Donor-Acceptor Architecture for High-Sensitivity Semiconductor Photodetectors." Advanced Materials (Deerfield Beach, Fla.), vol. 38, no. 5, 2026, p. e15057, https://doi.org/10.1002/adma.202515057.