| Authors: |
Liu S; Shandong Key Laboratory for Special Silicon-containing Material, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250014, PR China., Liu X; Shandong Key Laboratory for Special Silicon-containing Material, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250014, PR China. Electronic address: liuxiaochan@sdas.org., Liu G; Shandong Key Laboratory for Special Silicon-containing Material, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250014, PR China., Niu J; Shandong Key Laboratory for Special Silicon-containing Material, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250014, PR China., Liu R; Shandong Key Laboratory for Special Silicon-containing Material, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250014, PR China., Yuan Z; Shandong Key Laboratory for Special Silicon-containing Material, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250014, PR China., Filatov S; Shandong Key Laboratory for Special Silicon-containing Material, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250014, PR China., Zhang J; Shandong Key Laboratory for Special Silicon-containing Material, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250014, PR China. Electronic address: zhangjing@sdas.org., Yi X; Shandong Key Laboratory for Special Silicon-containing Material, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250014, PR China. |
