| Authors: |
Do VD; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Vu VT; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Nguyen VC; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea., Dat VK; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim WK; Semiconductor R&D Center, Samsung Electronics, Hwaseong 18448, Republic of Korea., Tran TU; Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea., Nguyen MC; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Duong NT; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea., Cabanillas A; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260, United States., Li H; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260, United States., Yu WJ; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea. |
