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Current Rectification in a Sub-2 nm CNT/V-Doped WS2/MoS2/CNT Vertical Monolayer P-N Diode.

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Title: Current Rectification in a Sub-2 nm CNT/V-Doped WS2/MoS2/CNT Vertical Monolayer P-N Diode.
Authors: Do VD; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Vu VT; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Nguyen VC; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea., Dat VK; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim WK; Semiconductor R&D Center, Samsung Electronics, Hwaseong 18448, Republic of Korea., Tran TU; Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea., Nguyen MC; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Duong NT; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea., Cabanillas A; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260, United States., Li H; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260, United States., Yu WJ; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Source: ACS nano [ACS Nano] 2026 Jan 13; Vol. 20 (1), pp. 522-532. Date of Electronic Publication: 2025 Dec 18.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Current Rectification in a Sub-2 nm CNT/V-Doped WS<subscript>2</subscript>/MoS<subscript>2</subscript>/CNT Vertical Monolayer P-N Diode.
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  Data: <searchLink fieldCode="AU" term="%22Do+VD%22">Do VD</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Vu+VT%22">Vu VT</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Nguyen+VC%22">Nguyen VC</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Dat+VK%22">Dat VK</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+WK%22">Kim WK</searchLink>; Semiconductor R&D Center, Samsung Electronics, Hwaseong 18448, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Tran+TU%22">Tran TU</searchLink>; Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Nguyen+MC%22">Nguyen MC</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Duong+NT%22">Duong NT</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Cabanillas+A%22">Cabanillas A</searchLink>; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260, United States.<br /><searchLink fieldCode="AU" term="%22Li+H%22">Li H</searchLink>; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260, United States.<br /><searchLink fieldCode="AU" term="%22Yu+WJ%22">Yu WJ</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%22101313589%22">ACS nano</searchLink> [ACS Nano] 2026 Jan 13; Vol. 20 (1), pp. 522-532. <i>Date of Electronic Publication: </i>2025 Dec 18.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101313589 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1936-086X (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219360851%22">19360851 </searchLink><i>NLM ISO Abbreviation: </i>ACS Nano <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=41411031
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        Value: 10.1021/acsnano.5c13793
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              Text: 2026 Jan 13
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