APA (7th ed.) Citation

T, L., S, L., H, W., JY, K., & J, J. (2026). Polycrystalline InGaO Thin-Film Transistor with SiO2 Gate Insulator for High-Performance Artificial Synapses. ACS applied materials & interfaces, 18(1), 2056. https://doi.org/10.1021/acsami.5c20927

Chicago Style (17th ed.) Citation

T, Lim, Lee S, Wi H, Kwak JY, and Jang J. "Polycrystalline InGaO Thin-Film Transistor with SiO2 Gate Insulator for High-Performance Artificial Synapses." ACS Applied Materials & Interfaces 18, no. 1 (2026): 2056. https://doi.org/10.1021/acsami.5c20927.

MLA (9th ed.) Citation

T, Lim, et al. "Polycrystalline InGaO Thin-Film Transistor with SiO2 Gate Insulator for High-Performance Artificial Synapses." ACS Applied Materials & Interfaces, vol. 18, no. 1, 2026, p. 2056, https://doi.org/10.1021/acsami.5c20927.