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Enhancing Photon Indistinguishability of Spectrally Mismatched Single Photons by Cavity Floquet Engineering.

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Title: Enhancing Photon Indistinguishability of Spectrally Mismatched Single Photons by Cavity Floquet Engineering.
Authors: Yu JW; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China., Zhou XQ; Westlake University, Department of Physics, School of Science, Hangzhou 310030, China.; Westlake Institute for Advanced Study, Institute of Natural Sciences, Hangzhou 310024, China., Ni ZB; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China., Cheng XT; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China., Zhao Y; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China., Zhu HH; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.; Zhejiang University, College of Integrated Circuits, Hangzhou 311200, China., Li CH; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.; Zhejiang Lab, Research Institute of Intelligent Computing, Hangzhou 311121, China., Liu F; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China., Jin CY; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.; Zhejiang University, College of Integrated Circuits, Hangzhou 311200, China.
Source: Physical review letters [Phys Rev Lett] 2026 Feb 06; Vol. 136 (5), pp. 053601.
Publication Type: Journal Article
Journal Info: Publisher: American Physical Society Country of Publication: United States NLM ID: 0401141 Publication Model: Print Cited Medium: Internet ISSN: 1079-7114 (Electronic) Linking ISSN: 00319007 NLM ISO Abbreviation: Phys Rev Lett Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Enhancing Photon Indistinguishability of Spectrally Mismatched Single Photons by Cavity Floquet Engineering.
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  Data: <searchLink fieldCode="AU" term="%22Yu+JW%22">Yu JW</searchLink>; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.<br /><searchLink fieldCode="AU" term="%22Zhou+XQ%22">Zhou XQ</searchLink>; Westlake University, Department of Physics, School of Science, Hangzhou 310030, China.; Westlake Institute for Advanced Study, Institute of Natural Sciences, Hangzhou 310024, China.<br /><searchLink fieldCode="AU" term="%22Ni+ZB%22">Ni ZB</searchLink>; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.<br /><searchLink fieldCode="AU" term="%22Cheng+XT%22">Cheng XT</searchLink>; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.<br /><searchLink fieldCode="AU" term="%22Zhao+Y%22">Zhao Y</searchLink>; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.<br /><searchLink fieldCode="AU" term="%22Zhu+HH%22">Zhu HH</searchLink>; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.; Zhejiang University, College of Integrated Circuits, Hangzhou 311200, China.<br /><searchLink fieldCode="AU" term="%22Li+CH%22">Li CH</searchLink>; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.; Zhejiang Lab, Research Institute of Intelligent Computing, Hangzhou 311121, China.<br /><searchLink fieldCode="AU" term="%22Liu+F%22">Liu F</searchLink>; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.<br /><searchLink fieldCode="AU" term="%22Jin+CY%22">Jin CY</searchLink>; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.; Zhejiang University, College of Integrated Circuits, Hangzhou 311200, China.
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  Data: <searchLink fieldCode="JN" term="%220401141%22">Physical review letters</searchLink> [Phys Rev Lett] 2026 Feb 06; Vol. 136 (5), pp. 053601.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Physical+Society%22">American Physical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>0401141 <i>Publication Model: </i>Print <i>Cited Medium: </i>Internet <i>ISSN: </i>1079-7114 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2200319007%22">00319007 </searchLink><i>NLM ISO Abbreviation: </i>Phys Rev Lett <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1103/ww5v-ct3q
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            – D: 06
              M: 02
              Text: 2026 Feb 06
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              Y: 2026
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