APA (7th ed.) Citation

XL, D., YD, G., YW, C., Y, J., HR, H., MJ, J., . . . XH, Y. (2026). Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs. Nanoscale, 18(12), 6470. https://doi.org/10.1039/d5nr04763c

Chicago Style (17th ed.) Citation

XL, Duan, et al. "Sub-5 Nm One-dimensional Post-transition-metal Monochalcogenide Gate-all-around MOSFETs." Nanoscale 18, no. 12 (2026): 6470. https://doi.org/10.1039/d5nr04763c.

MLA (9th ed.) Citation

XL, Duan, et al. "Sub-5 Nm One-dimensional Post-transition-metal Monochalcogenide Gate-all-around MOSFETs." Nanoscale, vol. 18, no. 12, 2026, p. 6470, https://doi.org/10.1039/d5nr04763c.