Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs.
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| Title: | Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs. |
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| Authors: | Duan XL; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn., Guo YD; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China. hlzeng@njupt.edu.cn., Chen YW; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn., Jiang Y; College of Science, Jinling Institute of Technology, Nanjing 211169, China. jiangyue@jit.edu.cn.; Jiangsu Physical Science Research Center, Nanjing 210093, China., Hu HR; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn., Jiang MJ; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn., Ma XY; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn., Hu JL; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn., Lin CB; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn., Guo F; Suzhou Laboratory, Suzhou 215000, China. guof@szlab.ac.cn., Zeng HL; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China. hlzeng@njupt.edu.cn.; College of Natural Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China.; Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, China., Yan XH; College of Natural Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China.; Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, China. |
| Source: | Nanoscale [Nanoscale] 2026 Mar 26; Vol. 18 (12), pp. 6470-6480. Date of Electronic Publication: 2026 Mar 26. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: RSC Pub Country of Publication: England NLM ID: 101525249 Publication Model: Electronic Cited Medium: Internet ISSN: 2040-3372 (Electronic) Linking ISSN: 20403364 NLM ISO Abbreviation: Nanoscale Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 41729535 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Duan+XL%22">Duan XL</searchLink>; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.<br /><searchLink fieldCode="AU" term="%22Guo+YD%22">Guo YD</searchLink>; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China. hlzeng@njupt.edu.cn.<br /><searchLink fieldCode="AU" term="%22Chen+YW%22">Chen YW</searchLink>; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.<br /><searchLink fieldCode="AU" term="%22Jiang+Y%22">Jiang Y</searchLink>; College of Science, Jinling Institute of Technology, Nanjing 211169, China. jiangyue@jit.edu.cn.; Jiangsu Physical Science Research Center, Nanjing 210093, China.<br /><searchLink fieldCode="AU" term="%22Hu+HR%22">Hu HR</searchLink>; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.<br /><searchLink fieldCode="AU" term="%22Jiang+MJ%22">Jiang MJ</searchLink>; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.<br /><searchLink fieldCode="AU" term="%22Ma+XY%22">Ma XY</searchLink>; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.<br /><searchLink fieldCode="AU" term="%22Hu+JL%22">Hu JL</searchLink>; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.<br /><searchLink fieldCode="AU" term="%22Lin+CB%22">Lin CB</searchLink>; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China. yandongguo@njupt.edu.cn.<br /><searchLink fieldCode="AU" term="%22Guo+F%22">Guo F</searchLink>; Suzhou Laboratory, Suzhou 215000, China. guof@szlab.ac.cn.<br /><searchLink fieldCode="AU" term="%22Zeng+HL%22">Zeng HL</searchLink>; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China. hlzeng@njupt.edu.cn.; College of Natural Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China.; Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, China.<br /><searchLink fieldCode="AU" term="%22Yan+XH%22">Yan XH</searchLink>; College of Natural Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China.; Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, China. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101525249%22">Nanoscale</searchLink> [Nanoscale] 2026 Mar 26; Vol. 18 (12), pp. 6470-6480. <i>Date of Electronic Publication: </i>2026 Mar 26. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22RSC+Pub%22">RSC Pub </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101525249 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2040-3372 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220403364%22">20403364 </searchLink><i>NLM ISO Abbreviation: </i>Nanoscale <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=41729535 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1039/d5nr04763c Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: 6470 Titles: – TitleFull: Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Duan XL – PersonEntity: Name: NameFull: Guo YD – PersonEntity: Name: NameFull: Chen YW – PersonEntity: Name: NameFull: Jiang Y – PersonEntity: Name: NameFull: Hu HR – PersonEntity: Name: NameFull: Jiang MJ – PersonEntity: Name: NameFull: Ma XY – PersonEntity: Name: NameFull: Hu JL – PersonEntity: Name: NameFull: Lin CB – PersonEntity: Name: NameFull: Guo F – PersonEntity: Name: NameFull: Zeng HL – PersonEntity: Name: NameFull: Yan XH IsPartOfRelationships: – BibEntity: Dates: – D: 26 M: 03 Text: 2026 Mar 26 Type: published Y: 2026 Identifiers: – Type: issn-electronic Value: 2040-3372 Numbering: – Type: volume Value: 18 – Type: issue Value: 12 Titles: – TitleFull: Nanoscale Type: main |
| ResultId | 1 |
