Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter.
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| Title: | Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter. |
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| Authors: | Cheng HC; Department of Aerospace and Systems Engineering, Feng Chia University, Taichung, 407, Taiwan. hccheng@fcu.edu.tw., Jhu WY; Ph.D Program of Mechanical and Aeronautical Engineering, Feng Chia University, Taichung, 407, Taiwan., Liu YC; Electronic & Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Hsin-chu, 31040, Taiwan., Yu CF; Department of Mechanical Engineering, National United University, Miaoli, 360, Taiwan., Chiu PK; Electronic & Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Hsin-chu, 31040, Taiwan., Chang TC; Electronic & Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Hsin-chu, 31040, Taiwan. |
| Source: | Scientific reports [Sci Rep] 2026 Mar 14; Vol. 16 (1). Date of Electronic Publication: 2026 Mar 14. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| ISSN: | 2045-2322 |
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| DOI: | 10.1038/s41598-026-44458-9 |
