Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide.
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| Title: | Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide. |
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| Authors: | Yang X; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China., Porter M; Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA.; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Qin Y; Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA.; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Yang Z; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China., Gong H; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China., Jin L; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Xi Z; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Wang H; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China., Zhu L; Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA.; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Zhang Y; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China. yuhzhang@hku.hk.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China. yuhzhang@hku.hk., Shao L; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA. shaolb@vt.edu.; Department of Physics and Center for Quantum Information Science and Engineering (VTQ), Virginia Tech, Blacksburg, VA, USA. shaolb@vt.edu. |
| Source: | Nature communications [Nat Commun] 2026 Mar 23; Vol. 17 (1). Date of Electronic Publication: 2026 Mar 23. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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| ISSN: | 2041-1723 |
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| DOI: | 10.1038/s41467-026-70963-6 |
