View in EDS HTML Full Text PDF Full Text

Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide.

Saved in:
Bibliographic Details
Title: Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide.
Authors: Yang X; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China., Porter M; Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA.; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Qin Y; Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA.; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Yang Z; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China., Gong H; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China., Jin L; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Xi Z; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Wang H; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China., Zhu L; Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA.; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA., Zhang Y; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China. yuhzhang@hku.hk.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China. yuhzhang@hku.hk., Shao L; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA. shaolb@vt.edu.; Department of Physics and Center for Quantum Information Science and Engineering (VTQ), Virginia Tech, Blacksburg, VA, USA. shaolb@vt.edu.
Source: Nature communications [Nat Commun] 2026 Mar 23; Vol. 17 (1). Date of Electronic Publication: 2026 Mar 23.
Publication Type: Journal Article
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 41872213
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Yang+X%22">Yang X</searchLink>; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China.<br /><searchLink fieldCode="AU" term="%22Porter+M%22">Porter M</searchLink>; Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA.; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA.<br /><searchLink fieldCode="AU" term="%22Qin+Y%22">Qin Y</searchLink>; Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA.; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA.<br /><searchLink fieldCode="AU" term="%22Yang+Z%22">Yang Z</searchLink>; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China.<br /><searchLink fieldCode="AU" term="%22Gong+H%22">Gong H</searchLink>; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China.<br /><searchLink fieldCode="AU" term="%22Jin+L%22">Jin L</searchLink>; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA.<br /><searchLink fieldCode="AU" term="%22Xi+Z%22">Xi Z</searchLink>; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA.<br /><searchLink fieldCode="AU" term="%22Wang+H%22">Wang H</searchLink>; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China.<br /><searchLink fieldCode="AU" term="%22Zhu+L%22">Zhu L</searchLink>; Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA.; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA.<br /><searchLink fieldCode="AU" term="%22Zhang+Y%22">Zhang Y</searchLink>; Centre for Advanced Semiconductors and Integrated Circuits (CASIC), University of Hong Kong, Hong Kong SAR, China. yuhzhang@hku.hk.; Department of Electrical and Computer Engineering, University of Hong Kong, Hong Kong SAR, China. yuhzhang@hku.hk.<br /><searchLink fieldCode="AU" term="%22Shao+L%22">Shao L</searchLink>; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA. shaolb@vt.edu.; Department of Physics and Center for Quantum Information Science and Engineering (VTQ), Virginia Tech, Blacksburg, VA, USA. shaolb@vt.edu.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101528555%22">Nature communications</searchLink> [Nat Commun] 2026 Mar 23; Vol. 17 (1). <i>Date of Electronic Publication: </i>2026 Mar 23.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Pub%2E+Group%22">Nature Pub. Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101528555 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2041-1723 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220411723%22">20411723 </searchLink><i>NLM ISO Abbreviation: </i>Nat Commun <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=41872213
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1038/s41467-026-70963-6
    Languages:
      – Code: eng
        Text: English
    Titles:
      – TitleFull: Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Yang X
      – PersonEntity:
          Name:
            NameFull: Porter M
      – PersonEntity:
          Name:
            NameFull: Qin Y
      – PersonEntity:
          Name:
            NameFull: Yang Z
      – PersonEntity:
          Name:
            NameFull: Gong H
      – PersonEntity:
          Name:
            NameFull: Jin L
      – PersonEntity:
          Name:
            NameFull: Xi Z
      – PersonEntity:
          Name:
            NameFull: Wang H
      – PersonEntity:
          Name:
            NameFull: Zhu L
      – PersonEntity:
          Name:
            NameFull: Zhang Y
      – PersonEntity:
          Name:
            NameFull: Shao L
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 23
              M: 03
              Text: 2026 Mar 23
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-electronic
              Value: 2041-1723
          Numbering:
            – Type: volume
              Value: 17
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Nature communications
              Type: main
ResultId 1