Tuning Interfacial Phonon Transport in GaN/WSSe van der Waals Heterostructure toward High-Efficiency Thermoelectric Performance.

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Title: Tuning Interfacial Phonon Transport in GaN/WSSe van der Waals Heterostructure toward High-Efficiency Thermoelectric Performance.
Authors: Kanagaraj Ameirtham JVR; Computational Material Science and Nano Device Simulation Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India., Devaraj R; Computational Material Science and Nano Device Simulation Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India., Christian PK; Computational Material Science and Nano Device Simulation Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India., Thiruvadigal DJ; Computational Material Science and Nano Device Simulation Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India., Kumar JS; Computational Material Science and Nano Device Simulation Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India., Rajalakshmi Mohanraj H; Computational Material Science and Nano Device Simulation Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India.
Source: Langmuir : the ACS journal of surfaces and colloids [Langmuir] 2026 Apr 14; Vol. 42 (14), pp. 10021-10036. Date of Electronic Publication: 2026 Mar 29.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 9882736 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1520-5827 (Electronic) Linking ISSN: 07437463 NLM ISO Abbreviation: Langmuir Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1520-5827
DOI:10.1021/acs.langmuir.6c00175