Martensitic Transition Associated with Spin-Crossover Enabling Crystal Jumping and Pyroelectric Response.

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Title: Martensitic Transition Associated with Spin-Crossover Enabling Crystal Jumping and Pyroelectric Response.
Authors: Wang LY; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China., Hu JS; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China., Li YX; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China., Wang JS; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China., Tang Z; Henan Key Laboratory of Polyoxometalate Chemistry, College of Chemistry and Molecular Sciences, Henan University, Kaifeng, Henan 475004, China., Chen YX; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China., Sun RY; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China., Gao KG; College of Physical Science and Technology, Yangzhou University, Yangzhou, Jiangsu 225009, China., Yao ZS; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China., Tao J; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China.
Source: Journal of the American Chemical Society [J Am Chem Soc] 2026 May 06; Vol. 148 (17), pp. 18044-18051. Date of Electronic Publication: 2026 Apr 22.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 7503056 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1520-5126 (Electronic) Linking ISSN: 00027863 NLM ISO Abbreviation: J Am Chem Soc Subsets: MEDLINE; PubMed not MEDLINE
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  Data: Martensitic Transition Associated with Spin-Crossover Enabling Crystal Jumping and Pyroelectric Response.
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  Data: <searchLink fieldCode="AU" term="%22Wang+LY%22">Wang LY</searchLink>; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China.<br /><searchLink fieldCode="AU" term="%22Hu+JS%22">Hu JS</searchLink>; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China.<br /><searchLink fieldCode="AU" term="%22Li+YX%22">Li YX</searchLink>; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China.<br /><searchLink fieldCode="AU" term="%22Wang+JS%22">Wang JS</searchLink>; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China.<br /><searchLink fieldCode="AU" term="%22Tang+Z%22">Tang Z</searchLink>; Henan Key Laboratory of Polyoxometalate Chemistry, College of Chemistry and Molecular Sciences, Henan University, Kaifeng, Henan 475004, China.<br /><searchLink fieldCode="AU" term="%22Chen+YX%22">Chen YX</searchLink>; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China.<br /><searchLink fieldCode="AU" term="%22Sun+RY%22">Sun RY</searchLink>; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China.<br /><searchLink fieldCode="AU" term="%22Gao+KG%22">Gao KG</searchLink>; College of Physical Science and Technology, Yangzhou University, Yangzhou, Jiangsu 225009, China.<br /><searchLink fieldCode="AU" term="%22Yao+ZS%22">Yao ZS</searchLink>; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China.<br /><searchLink fieldCode="AU" term="%22Tao+J%22">Tao J</searchLink>; MOE Key Laboratory of Cluster Science, Beijing Key Laboratory of Intelligent Molecular Materials and High-throughput Manufacturing, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China.
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  Data: <searchLink fieldCode="JN" term="%227503056%22">Journal of the American Chemical Society</searchLink> [J Am Chem Soc] 2026 May 06; Vol. 148 (17), pp. 18044-18051. <i>Date of Electronic Publication: </i>2026 Apr 22.
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        Value: 10.1021/jacs.6c01880
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            – D: 06
              M: 05
              Text: 2026 May 06
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