APA (7th ed.) Citation

NT, D., S, K., MC, N., HS, K., VT, L., HZ, G., . . . SC, L. (2026). Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers. Nature communications, 17(1), . https://doi.org/10.1038/s41467-026-73279-7

Chicago Style (17th ed.) Citation

NT, Duong, et al. "Ultrafast Switching and High-endurance Nonvolatile Memory Enabled by Intrinsic Switchable Polarization in Semiconducting Janus Monolayers." Nature Communications 17, no. 1 (2026). https://doi.org/10.1038/s41467-026-73279-7.

MLA (9th ed.) Citation

NT, Duong, et al. "Ultrafast Switching and High-endurance Nonvolatile Memory Enabled by Intrinsic Switchable Polarization in Semiconducting Janus Monolayers." Nature Communications, vol. 17, no. 1, 2026, https://doi.org/10.1038/s41467-026-73279-7.