Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers.
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| Title: | Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers. |
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| Authors: | Duong NT; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.; Faculty of Materials Science and Engineering, Phenikaa School of Engineering, Phenikaa University, Hanoi, Vietnam., Krishna S; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea., Nguyen MC; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea., Kim HS; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea., Lam VT; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea., Gul HZ; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea., Choi SH; Department of Electrical and Computer Engineering, Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, USA., Kim M; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea., Lee D; Department of Physics, Research Institute for Materials and Energy Sciences, Jeonbuk National University, Jeonju, Republic of Korea., Tran TU; Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon, Republic of Korea., Dat VK; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea., Do VD; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea., Hoang VH; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea., Rho H; Department of Physics, Research Institute for Materials and Energy Sciences, Jeonbuk National University, Jeonju, Republic of Korea., Kim YM; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.; Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Suwon, Republic of Korea., Yu WJ; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea., Kim KK; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea. kikangkim@skku.edu.; Department of Physics, Sungkyunkwan University, Suwon, Republic of Korea. kikangkim@skku.edu.; Center for Low-Dimensional Quantum Materials, Hubei University of Technology, Wuhan, China. kikangkim@skku.edu.; Center for Integrated Nanostructure Physics (CINAP), Sungkyunkwan University, Suwon, Republic of Korea. kikangkim@skku.edu., Lim SC; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea. seonglim@skku.edu.; Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon, Republic of Korea. seonglim@skku.edu. |
| Source: | Nature communications [Nat Commun] 2026 May 20; Vol. 17 (1). Date of Electronic Publication: 2026 May 20. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 42161987 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Duong+NT%22">Duong NT</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.; Faculty of Materials Science and Engineering, Phenikaa School of Engineering, Phenikaa University, Hanoi, Vietnam.<br /><searchLink fieldCode="AU" term="%22Krishna+S%22">Krishna S</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Nguyen+MC%22">Nguyen MC</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+HS%22">Kim HS</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lam+VT%22">Lam VT</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Gul+HZ%22">Gul HZ</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Choi+SH%22">Choi SH</searchLink>; Department of Electrical and Computer Engineering, Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, USA.<br /><searchLink fieldCode="AU" term="%22Kim+M%22">Kim M</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+D%22">Lee D</searchLink>; Department of Physics, Research Institute for Materials and Energy Sciences, Jeonbuk National University, Jeonju, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Tran+TU%22">Tran TU</searchLink>; Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Dat+VK%22">Dat VK</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Do+VD%22">Do VD</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hoang+VH%22">Hoang VH</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Rho+H%22">Rho H</searchLink>; Department of Physics, Research Institute for Materials and Energy Sciences, Jeonbuk National University, Jeonju, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+YM%22">Kim YM</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.; Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yu+WJ%22">Yu WJ</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+KK%22">Kim KK</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea. kikangkim@skku.edu.; Department of Physics, Sungkyunkwan University, Suwon, Republic of Korea. kikangkim@skku.edu.; Center for Low-Dimensional Quantum Materials, Hubei University of Technology, Wuhan, China. kikangkim@skku.edu.; Center for Integrated Nanostructure Physics (CINAP), Sungkyunkwan University, Suwon, Republic of Korea. kikangkim@skku.edu.<br /><searchLink fieldCode="AU" term="%22Lim+SC%22">Lim SC</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea. seonglim@skku.edu.; Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon, Republic of Korea. seonglim@skku.edu. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101528555%22">Nature communications</searchLink> [Nat Commun] 2026 May 20; Vol. 17 (1). <i>Date of Electronic Publication: </i>2026 May 20. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Pub%2E+Group%22">Nature Pub. Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101528555 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2041-1723 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220411723%22">20411723 </searchLink><i>NLM ISO Abbreviation: </i>Nat Commun <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=42161987 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1038/s41467-026-73279-7 Languages: – Code: eng Text: English Titles: – TitleFull: Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Duong NT – PersonEntity: Name: NameFull: Krishna S – PersonEntity: Name: NameFull: Nguyen MC – PersonEntity: Name: NameFull: Kim HS – PersonEntity: Name: NameFull: Lam VT – PersonEntity: Name: NameFull: Gul HZ – PersonEntity: Name: NameFull: Choi SH – PersonEntity: Name: NameFull: Kim M – PersonEntity: Name: NameFull: Lee D – PersonEntity: Name: NameFull: Tran TU – PersonEntity: Name: NameFull: Dat VK – PersonEntity: Name: NameFull: Do VD – PersonEntity: Name: NameFull: Hoang VH – PersonEntity: Name: NameFull: Rho H – PersonEntity: Name: NameFull: Kim YM – PersonEntity: Name: NameFull: Yu WJ – PersonEntity: Name: NameFull: Kim KK – PersonEntity: Name: NameFull: Lim SC IsPartOfRelationships: – BibEntity: Dates: – D: 20 M: 05 Text: 2026 May 20 Type: published Y: 2026 Identifiers: – Type: issn-electronic Value: 2041-1723 Numbering: – Type: volume Value: 17 – Type: issue Value: 1 Titles: – TitleFull: Nature communications Type: main |
| ResultId | 1 |