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Elemental Selector for High-Density Memory Integration.

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Title: Elemental Selector for High-Density Memory Integration.
Authors: Yuan S; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China., Xuan P; Yangtze Memory Technology Co., Ltd. (YMTC), Wuhan, 430078, People's Republic of China., Xu M; Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong, People's Republic of China. mengxu@hku.hk., Xu M; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China. mxu@hust.edu.cn., Miao X; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.
Source: Nano-micro letters [Nanomicro Lett] 2026 Jul 13; Vol. 18 (1). Date of Electronic Publication: 2026 Jul 13.
Publication Type: Editorial
Journal Info: Publisher: Springer Country of Publication: Germany NLM ID: 101727940 Publication Model: Electronic Cited Medium: Internet ISSN: 2150-5551 (Electronic) Linking ISSN: 21505551 NLM ISO Abbreviation: Nanomicro Lett Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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PubType: Editorial & Opinion
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  Data: <searchLink fieldCode="AU" term="%22Yuan+S%22">Yuan S</searchLink>; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.<br /><searchLink fieldCode="AU" term="%22Xuan+P%22">Xuan P</searchLink>; Yangtze Memory Technology Co., Ltd. (YMTC), Wuhan, 430078, People's Republic of China.<br /><searchLink fieldCode="AU" term="%22Xu+M%22">Xu M</searchLink>; Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong, People's Republic of China. mengxu@hku.hk.<br /><searchLink fieldCode="AU" term="%22Xu+M%22">Xu M</searchLink>; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China. mxu@hust.edu.cn.<br /><searchLink fieldCode="AU" term="%22Miao+X%22">Miao X</searchLink>; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.
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  Data: <searchLink fieldCode="JN" term="%22101727940%22">Nano-micro letters</searchLink> [Nanomicro Lett] 2026 Jul 13; Vol. 18 (1). <i>Date of Electronic Publication: </i>2026 Jul 13.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Springer%22">Springer </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>101727940 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2150-5551 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2221505551%22">21505551 </searchLink><i>NLM ISO Abbreviation: </i>Nanomicro Lett <i>Subsets: </i>PubMed not MEDLINE
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        Value: 10.1007/s40820-026-02279-5
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        Text: English
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      – TitleFull: Elemental Selector for High-Density Memory Integration.
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              Text: 2026 Jul 13
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              Y: 2026
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