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Interlayer-Free Ferroelectric Transistors via Depletion Charge Boosting in Oxide Channel for Neuromorphic Applications.

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Title: Interlayer-Free Ferroelectric Transistors via Depletion Charge Boosting in Oxide Channel for Neuromorphic Applications.
Authors: Han JS; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea., Choi S; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea., Hong SG; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea., Moon K; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea., Lee JH; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea., Heo NS; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea., Yoon Y; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea., Lee S; Display Research Center, Samsung Display Co., Ltd., 1, Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea., Kim HJ; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2026 Jul 17. Date of Electronic Publication: 2026 Jul 17.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE
Database: MEDLINE Ultimate
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  Data: <searchLink fieldCode="AU" term="%22Han+JS%22">Han JS</searchLink>; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Choi+S%22">Choi S</searchLink>; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hong+SG%22">Hong SG</searchLink>; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Moon+K%22">Moon K</searchLink>; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+JH%22">Lee JH</searchLink>; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Heo+NS%22">Heo NS</searchLink>; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yoon+Y%22">Yoon Y</searchLink>; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+S%22">Lee S</searchLink>; Display Research Center, Samsung Display Co., Ltd., 1, Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+HJ%22">Kim HJ</searchLink>; School of Electrical and Electronic Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
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        Value: 10.1021/acsami.6c10355
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        Text: English
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      – TitleFull: Interlayer-Free Ferroelectric Transistors via Depletion Charge Boosting in Oxide Channel for Neuromorphic Applications.
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              Text: 2026 Jul 17
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