View in EDS

Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change Memory.

Saved in:
Bibliographic Details
Title: Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change Memory.
Authors: Kang MS; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Joo JM; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Choi JY; Department of Semiconductor System Engineering, Korea University, Seoul, Republic of Korea., Park JE; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Kim DH; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Oh JS; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Kim TG; School of Electrical Engineering, Korea University, Seoul, Republic of Korea.; Department of Semiconductor System Engineering, Korea University, Seoul, Republic of Korea.; Functional Materials and Materials Chemistry Laboratory, Department of Physiology, Saveetha Institute of Medical & Technical Sciences, Saveetha Dental College & Hospitals, Saveetha University, Chennai, Tamil Nadu, India.
Source: Small (Weinheim an der Bergstrasse, Germany) [Small] 2026 Jul 25, pp. e74774. Date of Electronic Publication: 2026 Jul 25.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE
Database: MEDLINE Ultimate
FullText Text:
  Availability: 0
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 42502177
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change Memory.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Kang+MS%22">Kang MS</searchLink>; School of Electrical Engineering, Korea University, Seoul, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Joo+JM%22">Joo JM</searchLink>; School of Electrical Engineering, Korea University, Seoul, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Choi+JY%22">Choi JY</searchLink>; Department of Semiconductor System Engineering, Korea University, Seoul, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Park+JE%22">Park JE</searchLink>; School of Electrical Engineering, Korea University, Seoul, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+DH%22">Kim DH</searchLink>; School of Electrical Engineering, Korea University, Seoul, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Oh+JS%22">Oh JS</searchLink>; School of Electrical Engineering, Korea University, Seoul, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+TG%22">Kim TG</searchLink>; School of Electrical Engineering, Korea University, Seoul, Republic of Korea.; Department of Semiconductor System Engineering, Korea University, Seoul, Republic of Korea.; Functional Materials and Materials Chemistry Laboratory, Department of Physiology, Saveetha Institute of Medical & Technical Sciences, Saveetha Dental College & Hospitals, Saveetha University, Chennai, Tamil Nadu, India.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101235338%22">Small (Weinheim an der Bergstrasse, Germany)</searchLink> [Small] 2026 Jul 25, pp. e74774. <i>Date of Electronic Publication: </i>2026 Jul 25.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-VCH%22">Wiley-VCH </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>101235338 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1613-6829 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2216136810%22">16136810 </searchLink><i>NLM ISO Abbreviation: </i>Small <i>Subsets: </i>MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=42502177
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/smll.74774
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: e74774
    Titles:
      – TitleFull: Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change Memory.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kang MS
      – PersonEntity:
          Name:
            NameFull: Joo JM
      – PersonEntity:
          Name:
            NameFull: Choi JY
      – PersonEntity:
          Name:
            NameFull: Park JE
      – PersonEntity:
          Name:
            NameFull: Kim DH
      – PersonEntity:
          Name:
            NameFull: Oh JS
      – PersonEntity:
          Name:
            NameFull: Kim TG
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 25
              M: 07
              Text: 2026 Jul 25
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-electronic
              Value: 1613-6829
          Titles:
            – TitleFull: Small (Weinheim an der Bergstrasse, Germany)
              Type: main
ResultId 1