Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change Memory.
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| Title: | Nitrogen-Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade-Off for 1S-1R Phase-Change Memory. |
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| Authors: | Kang MS; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Joo JM; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Choi JY; Department of Semiconductor System Engineering, Korea University, Seoul, Republic of Korea., Park JE; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Kim DH; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Oh JS; School of Electrical Engineering, Korea University, Seoul, Republic of Korea., Kim TG; School of Electrical Engineering, Korea University, Seoul, Republic of Korea.; Department of Semiconductor System Engineering, Korea University, Seoul, Republic of Korea.; Functional Materials and Materials Chemistry Laboratory, Department of Physiology, Saveetha Institute of Medical & Technical Sciences, Saveetha Dental College & Hospitals, Saveetha University, Chennai, Tamil Nadu, India. |
| Source: | Small (Weinheim an der Bergstrasse, Germany) [Small] 2026 Jul 25, pp. e74774. Date of Electronic Publication: 2026 Jul 25. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE |
| Database: | MEDLINE Ultimate |
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