APA (7th ed.) Citation

Y, S., D, K., YB, P., J, L., TH, L., & H, H. (2026). Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory beyond the Leakage Scaling Limit. Advanced materials (Deerfield Beach, Fla.), e74743. https://doi.org/10.1002/adma.74743

Chicago Style (17th ed.) Citation

Y, Seo, Kim D, Park YB, Lee J, Lee TH, and Hwang H. "Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory Beyond the Leakage Scaling Limit." Advanced Materials (Deerfield Beach, Fla.) 2026: e74743. https://doi.org/10.1002/adma.74743.

MLA (9th ed.) Citation

Y, Seo, et al. "Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory Beyond the Leakage Scaling Limit." Advanced Materials (Deerfield Beach, Fla.), 2026, p. e74743, https://doi.org/10.1002/adma.74743.