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Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory beyond the Leakage Scaling Limit.

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Title: Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory beyond the Leakage Scaling Limit.
Authors: Seo Y; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Kim D; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Park YB; School of Material Science and Engineering, Kyungpook National University, Daegu, Republic of Korea., Lee J; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Lee TH; School of Material Science and Engineering, Kyungpook National University, Daegu, Republic of Korea., Hwang H; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2026 Aug 20, pp. e74743. Date of Electronic Publication: 2026 Aug 20.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE
Database: MEDLINE Ultimate
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  Data: Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory beyond the Leakage Scaling Limit.
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  Data: <searchLink fieldCode="AU" term="%22Seo+Y%22">Seo Y</searchLink>; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+D%22">Kim D</searchLink>; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Park+YB%22">Park YB</searchLink>; School of Material Science and Engineering, Kyungpook National University, Daegu, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+J%22">Lee J</searchLink>; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+TH%22">Lee TH</searchLink>; School of Material Science and Engineering, Kyungpook National University, Daegu, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hwang+H%22">Hwang H</searchLink>; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%229885358%22">Advanced materials (Deerfield Beach, Fla.)</searchLink> [Adv Mater] 2026 Aug 20, pp. e74743. <i>Date of Electronic Publication: </i>2026 Aug 20.
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              Text: 2026 Aug 20
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