Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory beyond the Leakage Scaling Limit.
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| Title: | Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory beyond the Leakage Scaling Limit. |
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| Authors: | Seo Y; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Kim D; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Park YB; School of Material Science and Engineering, Kyungpook National University, Daegu, Republic of Korea., Lee J; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Lee TH; School of Material Science and Engineering, Kyungpook National University, Daegu, Republic of Korea., Hwang H; Center for Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea. |
| Source: | Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2026 Aug 20, pp. e74743. Date of Electronic Publication: 2026 Aug 20. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE |
| Database: | MEDLINE Ultimate |
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