Low-voltage organic transistors with an amorphous molecular gate dielectric.
Saved in:
| Title: | Low-voltage organic transistors with an amorphous molecular gate dielectric. |
|---|---|
| Authors: | Halik, Marcus, Klauk, Hagen, Zschieschang, Ute, Schmid, Günter, Dehm, Christine, Schütz, Markus, Maisch, Steffen, Effenberger, Franz, Brunnbauer, Markus, Stellacci, Francesco |
| Source: | Nature. 10/21/2004, Vol. 431 Issue 7011, p963-966. 4p. |
| Subjects: | Thin films, Solid state electronics, Organic thin films, Transistors, Organic semiconductors, Dielectrics |
| Abstract: | Organic thin film transistors (TFTs) are of interest for a variety of large-area electronic applications, such as displays, sensors and electronic barcodes. One of the key problems with existing organic TFTs is their large operating voltage, which often exceeds 20?V. This is due to poor capacitive coupling through relatively thick gate dielectric layers: these dielectrics are usually either inorganic oxides or nitrides, or insulating polymers, and are often thicker than 100?nm to minimize gate leakage currents. Here we demonstrate a manufacturing process for TFTs with a 2.5-nm-thick molecular self-assembled monolayer (SAM) gate dielectric and a high-mobility organic semiconductor (pentacene). These TFTs operate with supply voltages of less than 2?V, yet have gate currents that are lower than those of advanced silicon field-effect transistors with SiO2 dielectrics. These results should therefore increase the prospects of using organic TFTs in low-power applications (such as portable devices). Moreover, molecular SAMs may even be of interest for advanced silicon transistors where the continued reduction in dielectric thickness leads to ever greater gate leakage and power dissipation. [ABSTRACT FROM AUTHOR] |
| Copyright of Nature is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Psychology and Behavioral Sciences Collection |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
|---|---|
| Header | DbId: pbh DbLabel: Psychology and Behavioral Sciences Collection An: 14764728 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Low-voltage organic transistors with an amorphous molecular gate dielectric. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Halik%2C+Marcus%22">Halik, Marcus</searchLink><br /><searchLink fieldCode="AR" term="%22Klauk%2C+Hagen%22">Klauk, Hagen</searchLink><br /><searchLink fieldCode="AR" term="%22Zschieschang%2C+Ute%22">Zschieschang, Ute</searchLink><br /><searchLink fieldCode="AR" term="%22Schmid%2C+Günter%22">Schmid, Günter</searchLink><br /><searchLink fieldCode="AR" term="%22Dehm%2C+Christine%22">Dehm, Christine</searchLink><br /><searchLink fieldCode="AR" term="%22Schütz%2C+Markus%22">Schütz, Markus</searchLink><br /><searchLink fieldCode="AR" term="%22Maisch%2C+Steffen%22">Maisch, Steffen</searchLink><br /><searchLink fieldCode="AR" term="%22Effenberger%2C+Franz%22">Effenberger, Franz</searchLink><br /><searchLink fieldCode="AR" term="%22Brunnbauer%2C+Markus%22">Brunnbauer, Markus</searchLink><br /><searchLink fieldCode="AR" term="%22Stellacci%2C+Francesco%22">Stellacci, Francesco</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nature%22">Nature</searchLink>. 10/21/2004, Vol. 431 Issue 7011, p963-966. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Solid+state+electronics%22">Solid state electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Organic+thin+films%22">Organic thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Organic+semiconductors%22">Organic semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics%22">Dielectrics</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Organic thin film transistors (TFTs) are of interest for a variety of large-area electronic applications, such as displays, sensors and electronic barcodes. One of the key problems with existing organic TFTs is their large operating voltage, which often exceeds 20?V. This is due to poor capacitive coupling through relatively thick gate dielectric layers: these dielectrics are usually either inorganic oxides or nitrides, or insulating polymers, and are often thicker than 100?nm to minimize gate leakage currents. Here we demonstrate a manufacturing process for TFTs with a 2.5-nm-thick molecular self-assembled monolayer (SAM) gate dielectric and a high-mobility organic semiconductor (pentacene). These TFTs operate with supply voltages of less than 2?V, yet have gate currents that are lower than those of advanced silicon field-effect transistors with SiO2 dielectrics. These results should therefore increase the prospects of using organic TFTs in low-power applications (such as portable devices). Moreover, molecular SAMs may even be of interest for advanced silicon transistors where the continued reduction in dielectric thickness leads to ever greater gate leakage and power dissipation. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nature is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=pbh&AN=14764728 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1038/nature02987 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 963 Subjects: – SubjectFull: Thin films Type: general – SubjectFull: Solid state electronics Type: general – SubjectFull: Organic thin films Type: general – SubjectFull: Transistors Type: general – SubjectFull: Organic semiconductors Type: general – SubjectFull: Dielectrics Type: general Titles: – TitleFull: Low-voltage organic transistors with an amorphous molecular gate dielectric. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Halik, Marcus – PersonEntity: Name: NameFull: Klauk, Hagen – PersonEntity: Name: NameFull: Zschieschang, Ute – PersonEntity: Name: NameFull: Schmid, Günter – PersonEntity: Name: NameFull: Dehm, Christine – PersonEntity: Name: NameFull: Schütz, Markus – PersonEntity: Name: NameFull: Maisch, Steffen – PersonEntity: Name: NameFull: Effenberger, Franz – PersonEntity: Name: NameFull: Brunnbauer, Markus – PersonEntity: Name: NameFull: Stellacci, Francesco IsPartOfRelationships: – BibEntity: Dates: – D: 21 M: 10 Text: 10/21/2004 Type: published Y: 2004 Identifiers: – Type: issn-print Value: 00280836 Numbering: – Type: volume Value: 431 – Type: issue Value: 7011 Titles: – TitleFull: Nature Type: main |
| ResultId | 1 |
