View in EDS HTML Full Text PDF Full Text

Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors.

Saved in:
Bibliographic Details
Title: Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors.
Authors: Zhao, Bei, Zhang, Zucheng, Xu, Junqing, Guo, Dingli, Gu, Tiancheng, He, Guiming, Lu, Ping, He, Kun, Li, Jia, Chen, Zhao, Ren, Quan, Miao, Lin, Lu, Junpeng, Ni, Zhenhua, Duan, Xiangfeng, Duan, Xidong
Source: Science. 6/12/2025, Vol. 388 Issue 6752, p1183-1188. 6p.
Subjects: Semiconductors, Carrier density, Doping agents (Chemistry), Dielectrics, Van der Waals forces
Abstract: Tailoring carrier density in atomically thin two-dimensional (2D) semiconductors is challenging because of the inherently limited physical space for incorporating charge dopants. Here, we report that interlayer charge-transfer doping in type III van der Waals heterostructures can be greatly modulated by an external gate to realize a hyperdoping effect. Systematic gated-Hall measurements revealed that the modulated carrier density is about five times that of the gate capacitive charge, achieving an ultrahigh 2D hole density of 1.49 × 1014 per square centimeter, far exceeding the maximum possible electrostatic doping limit imposed by typical dielectric breakdown. The highly efficient hole-doping enables high-performance p-type 2D transistors with an ultralow contact resistance of ~0.041 kilohm micrometers and a record-high ON-state current density of ~2.30 milliamperes per micrometer. Editor's summary: Band alignment effects enable high levels of hole doping in a tungsten diselenide bilayer through its transfer of electrons into an adjacent tin disulfide monolayer. Ion implantation is often used to dope in semiconductor films, but this is difficult in few-layer transition metal dichalcogenides. Zhao et al. show that tuning of the band offset and charge transfer across the van der Waals interface with an external gate bias can produce a hole density of 1.49 × 1014 per square centimeter, which is about five times the conventional dielectric limit. —Phil Szuromi [ABSTRACT FROM AUTHOR]
Copyright of Science is the property of American Association for the Advancement of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Psychology and Behavioral Sciences Collection
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: pbh
DbLabel: Psychology and Behavioral Sciences Collection
An: 188104071
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Zhao%2C+Bei%22">Zhao, Bei</searchLink><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Zucheng%22">Zhang, Zucheng</searchLink><br /><searchLink fieldCode="AR" term="%22Xu%2C+Junqing%22">Xu, Junqing</searchLink><br /><searchLink fieldCode="AR" term="%22Guo%2C+Dingli%22">Guo, Dingli</searchLink><br /><searchLink fieldCode="AR" term="%22Gu%2C+Tiancheng%22">Gu, Tiancheng</searchLink><br /><searchLink fieldCode="AR" term="%22He%2C+Guiming%22">He, Guiming</searchLink><br /><searchLink fieldCode="AR" term="%22Lu%2C+Ping%22">Lu, Ping</searchLink><br /><searchLink fieldCode="AR" term="%22He%2C+Kun%22">He, Kun</searchLink><br /><searchLink fieldCode="AR" term="%22Li%2C+Jia%22">Li, Jia</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+Zhao%22">Chen, Zhao</searchLink><br /><searchLink fieldCode="AR" term="%22Ren%2C+Quan%22">Ren, Quan</searchLink><br /><searchLink fieldCode="AR" term="%22Miao%2C+Lin%22">Miao, Lin</searchLink><br /><searchLink fieldCode="AR" term="%22Lu%2C+Junpeng%22">Lu, Junpeng</searchLink><br /><searchLink fieldCode="AR" term="%22Ni%2C+Zhenhua%22">Ni, Zhenhua</searchLink><br /><searchLink fieldCode="AR" term="%22Duan%2C+Xiangfeng%22">Duan, Xiangfeng</searchLink><br /><searchLink fieldCode="AR" term="%22Duan%2C+Xidong%22">Duan, Xidong</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Science%22">Science</searchLink>. 6/12/2025, Vol. 388 Issue 6752, p1183-1188. 6p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Carrier+density%22">Carrier density</searchLink><br /><searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics%22">Dielectrics</searchLink><br /><searchLink fieldCode="DE" term="%22Van+der+Waals+forces%22">Van der Waals forces</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Tailoring carrier density in atomically thin two-dimensional (2D) semiconductors is challenging because of the inherently limited physical space for incorporating charge dopants. Here, we report that interlayer charge-transfer doping in type III van der Waals heterostructures can be greatly modulated by an external gate to realize a hyperdoping effect. Systematic gated-Hall measurements revealed that the modulated carrier density is about five times that of the gate capacitive charge, achieving an ultrahigh 2D hole density of 1.49 × 1014 per square centimeter, far exceeding the maximum possible electrostatic doping limit imposed by typical dielectric breakdown. The highly efficient hole-doping enables high-performance p-type 2D transistors with an ultralow contact resistance of ~0.041 kilohm micrometers and a record-high ON-state current density of ~2.30 milliamperes per micrometer. Editor's summary: Band alignment effects enable high levels of hole doping in a tungsten diselenide bilayer through its transfer of electrons into an adjacent tin disulfide monolayer. Ion implantation is often used to dope in semiconductor films, but this is difficult in few-layer transition metal dichalcogenides. Zhao et al. show that tuning of the band offset and charge transfer across the van der Waals interface with an external gate bias can produce a hole density of 1.49 × 1014 per square centimeter, which is about five times the conventional dielectric limit. —Phil Szuromi [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Science is the property of American Association for the Advancement of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=pbh&AN=188104071
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1126/science.adp8444
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1183
    Subjects:
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Carrier density
        Type: general
      – SubjectFull: Doping agents (Chemistry)
        Type: general
      – SubjectFull: Dielectrics
        Type: general
      – SubjectFull: Van der Waals forces
        Type: general
    Titles:
      – TitleFull: Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Zhao, Bei
      – PersonEntity:
          Name:
            NameFull: Zhang, Zucheng
      – PersonEntity:
          Name:
            NameFull: Xu, Junqing
      – PersonEntity:
          Name:
            NameFull: Guo, Dingli
      – PersonEntity:
          Name:
            NameFull: Gu, Tiancheng
      – PersonEntity:
          Name:
            NameFull: He, Guiming
      – PersonEntity:
          Name:
            NameFull: Lu, Ping
      – PersonEntity:
          Name:
            NameFull: He, Kun
      – PersonEntity:
          Name:
            NameFull: Li, Jia
      – PersonEntity:
          Name:
            NameFull: Chen, Zhao
      – PersonEntity:
          Name:
            NameFull: Ren, Quan
      – PersonEntity:
          Name:
            NameFull: Miao, Lin
      – PersonEntity:
          Name:
            NameFull: Lu, Junpeng
      – PersonEntity:
          Name:
            NameFull: Ni, Zhenhua
      – PersonEntity:
          Name:
            NameFull: Duan, Xiangfeng
      – PersonEntity:
          Name:
            NameFull: Duan, Xidong
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 12
              M: 06
              Text: 6/12/2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 00368075
          Numbering:
            – Type: volume
              Value: 388
            – Type: issue
              Value: 6752
          Titles:
            – TitleFull: Science
              Type: main
ResultId 1