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High-temperature memristors enabled by interfacial engineering.

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Title: High-temperature memristors enabled by interfacial engineering.
Authors: Zhao, Jian (AUTHOR), Jorgensen, Cameron S. (AUTHOR), Mahalingam, Krishnamurthy (AUTHOR), Bowers, Cynthia (AUTHOR), Sugimoto, Wataru (AUTHOR), Ito, Kai (AUTHOR), Kim, Seung Ju (AUTHOR), Zhao, Ruoyu (AUTHOR), Xu, Yichun (AUTHOR), Liao, Han-Ting (AUTHOR), Kalia, Rajiv K. (AUTHOR), Nakano, Aiichiro (AUTHOR), Shimamura, Kohei (AUTHOR), Shimojo, Fuyuki (AUTHOR), Vashishta, Priya (AUTHOR), Roy, Ajit K. (AUTHOR), Ge, Ning (AUTHOR), Hu, Miao (AUTHOR), Williams, R. Stanley (AUTHOR), Xia, Qiangfei (AUTHOR)
Source: Science. 5/14/2026, Vol. 392 Issue 6799, p771-779. 9p.
Subjects: Memristors, High temperature electronics, Surfaces (Technology), Tungsten, Nonvolatile memory, Thermal stability, Hafnium oxide, Graphene
Abstract: Nonvolatile memories (NVMs) that operate reliably at high temperatures are essential for electronics in extreme environments. Here, we report graphene (Gra)/HfOx/tungsten (W) memristors that operated reliably up to 700°C, with an ON/OFF current ratio of >103, data retention >50 hours, and endurance >109 switching cycles. Transmission electron microscopy revealed substantial W diffusion into the inert platinum (Pt) electrode in conventional Pt/HfOx/W memristors after high-temperature annealing, which was responsible for the thermal failure in conventional devices but not observed in Gra/HfOx/W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on Gra compared with metals such as Pt. These results underscore the critical role of interfacial engineering and the potential of two-dimensional materials for enabling reliable high-temperature NVM technologies. Editor's summary: Demand for electronics that withstand extreme thermal environments is rising, spanning deep-well drilling, nuclear energy, autonomous systems, and even the surfaces of Venus and Mercury or near spacecraft engines. Although wide-band-gap semiconductors such as silicon carbide enable transistor operation up to 800°C, reliable nonvolatile memories above 300°C remain elusive. Zhao et al. introduce memristors operating above 700°C, with more than 109 switching cycles, data retention for over 50 hours, ON/OFF ratios over 1000, switching speeds under 30 nanoseconds, and operating voltages under 1.5 volts. Material characterization and modeling explain this thermal resilience. These results pave the way for robust, high-temperature memory for extreme applications. —Yury Suleymanov [ABSTRACT FROM AUTHOR]
Copyright of Science is the property of American Association for the Advancement of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Psychology and Behavioral Sciences Collection
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: High-temperature memristors enabled by interfacial engineering.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Zhao%2C+Jian%22">Zhao, Jian</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jorgensen%2C+Cameron+S%2E%22">Jorgensen, Cameron S.</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mahalingam%2C+Krishnamurthy%22">Mahalingam, Krishnamurthy</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bowers%2C+Cynthia%22">Bowers, Cynthia</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sugimoto%2C+Wataru%22">Sugimoto, Wataru</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ito%2C+Kai%22">Ito, Kai</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Seung+Ju%22">Kim, Seung Ju</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhao%2C+Ruoyu%22">Zhao, Ruoyu</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Yichun%22">Xu, Yichun</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liao%2C+Han-Ting%22">Liao, Han-Ting</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kalia%2C+Rajiv+K%2E%22">Kalia, Rajiv K.</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Nakano%2C+Aiichiro%22">Nakano, Aiichiro</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shimamura%2C+Kohei%22">Shimamura, Kohei</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shimojo%2C+Fuyuki%22">Shimojo, Fuyuki</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Vashishta%2C+Priya%22">Vashishta, Priya</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Roy%2C+Ajit+K%2E%22">Roy, Ajit K.</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ge%2C+Ning%22">Ge, Ning</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hu%2C+Miao%22">Hu, Miao</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Williams%2C+R%2E+Stanley%22">Williams, R. Stanley</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xia%2C+Qiangfei%22">Xia, Qiangfei</searchLink> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Science%22">Science</searchLink>. 5/14/2026, Vol. 392 Issue 6799, p771-779. 9p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Memristors%22">Memristors</searchLink><br /><searchLink fieldCode="DE" term="%22High+temperature+electronics%22">High temperature electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Tungsten%22">Tungsten</searchLink><br /><searchLink fieldCode="DE" term="%22Nonvolatile+memory%22">Nonvolatile memory</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+stability%22">Thermal stability</searchLink><br /><searchLink fieldCode="DE" term="%22Hafnium+oxide%22">Hafnium oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Nonvolatile memories (NVMs) that operate reliably at high temperatures are essential for electronics in extreme environments. Here, we report graphene (Gra)/HfOx/tungsten (W) memristors that operated reliably up to 700°C, with an ON/OFF current ratio of >103, data retention >50 hours, and endurance >109 switching cycles. Transmission electron microscopy revealed substantial W diffusion into the inert platinum (Pt) electrode in conventional Pt/HfOx/W memristors after high-temperature annealing, which was responsible for the thermal failure in conventional devices but not observed in Gra/HfOx/W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on Gra compared with metals such as Pt. These results underscore the critical role of interfacial engineering and the potential of two-dimensional materials for enabling reliable high-temperature NVM technologies. Editor's summary: Demand for electronics that withstand extreme thermal environments is rising, spanning deep-well drilling, nuclear energy, autonomous systems, and even the surfaces of Venus and Mercury or near spacecraft engines. Although wide-band-gap semiconductors such as silicon carbide enable transistor operation up to 800°C, reliable nonvolatile memories above 300°C remain elusive. Zhao et al. introduce memristors operating above 700°C, with more than 109 switching cycles, data retention for over 50 hours, ON/OFF ratios over 1000, switching speeds under 30 nanoseconds, and operating voltages under 1.5 volts. Material characterization and modeling explain this thermal resilience. These results pave the way for robust, high-temperature memory for extreme applications. —Yury Suleymanov [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Science is the property of American Association for the Advancement of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1126/science.aeb9934
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 771
    Subjects:
      – SubjectFull: Memristors
        Type: general
      – SubjectFull: High temperature electronics
        Type: general
      – SubjectFull: Surfaces (Technology)
        Type: general
      – SubjectFull: Tungsten
        Type: general
      – SubjectFull: Nonvolatile memory
        Type: general
      – SubjectFull: Thermal stability
        Type: general
      – SubjectFull: Hafnium oxide
        Type: general
      – SubjectFull: Graphene
        Type: general
    Titles:
      – TitleFull: High-temperature memristors enabled by interfacial engineering.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Zhao, Jian
      – PersonEntity:
          Name:
            NameFull: Jorgensen, Cameron S.
      – PersonEntity:
          Name:
            NameFull: Mahalingam, Krishnamurthy
      – PersonEntity:
          Name:
            NameFull: Bowers, Cynthia
      – PersonEntity:
          Name:
            NameFull: Sugimoto, Wataru
      – PersonEntity:
          Name:
            NameFull: Ito, Kai
      – PersonEntity:
          Name:
            NameFull: Kim, Seung Ju
      – PersonEntity:
          Name:
            NameFull: Zhao, Ruoyu
      – PersonEntity:
          Name:
            NameFull: Xu, Yichun
      – PersonEntity:
          Name:
            NameFull: Liao, Han-Ting
      – PersonEntity:
          Name:
            NameFull: Kalia, Rajiv K.
      – PersonEntity:
          Name:
            NameFull: Nakano, Aiichiro
      – PersonEntity:
          Name:
            NameFull: Shimamura, Kohei
      – PersonEntity:
          Name:
            NameFull: Shimojo, Fuyuki
      – PersonEntity:
          Name:
            NameFull: Vashishta, Priya
      – PersonEntity:
          Name:
            NameFull: Roy, Ajit K.
      – PersonEntity:
          Name:
            NameFull: Ge, Ning
      – PersonEntity:
          Name:
            NameFull: Hu, Miao
      – PersonEntity:
          Name:
            NameFull: Williams, R. Stanley
      – PersonEntity:
          Name:
            NameFull: Xia, Qiangfei
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 14
              M: 05
              Text: 5/14/2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 00368075
          Numbering:
            – Type: volume
              Value: 392
            – Type: issue
              Value: 6799
          Titles:
            – TitleFull: Science
              Type: main
ResultId 1