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Suppression of Metal-Insulator Transition in VO2 by Electric Field—Induced Oxygen Vacancy Formation.

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Title: Suppression of Metal-Insulator Transition in VO2 by Electric Field—Induced Oxygen Vacancy Formation.
Authors: Jaewoo Jeong, Aetukun, Nagaphani, Graf, Tanja, Schladt, Thomas D., Samant, Mahesh G., Parkin, Stuart S. P.
Source: Science (pre-March 2025). 3/22/2013, Vol. 339 Issue 6126, p1402-1405. 4p.
Subjects: Metal-insulator transitions, Electrolytes, Vanadium oxide, Phase transitions, Transition temperature, Ionic liquids, Vacancy-dislocation interactions, Electrostatics
Abstract: Electrolyte gating with ionic liquids is a powerful tool for inducing novel conducting phases in correlated insulators. An archetypal correlated material is vanadium dioxide (VO2), which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO2 suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed. We found that electrolyte gating of VO2 leads not to electrostatically induced carriers but instead to the electric field-induced creation of oxygen vacancies, with consequent migration of oxygen from the oxide film into the ionic liquid. This mechanism should be taken into account in the interpretation of ionic liquid gating experiments. [ABSTRACT FROM AUTHOR]
Copyright of Science (pre-March 2025) is the property of American Association for the Advancement of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Psychology and Behavioral Sciences Collection
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  Data: Suppression of Metal-Insulator Transition in VO<subscript>2</subscript> by Electric Field—Induced Oxygen Vacancy Formation.
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  Data: <searchLink fieldCode="JN" term="%22Science+%28pre-March+2025%29%22">Science (pre-March 2025)</searchLink>. 3/22/2013, Vol. 339 Issue 6126, p1402-1405. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Metal-insulator+transitions%22">Metal-insulator transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Electrolytes%22">Electrolytes</searchLink><br /><searchLink fieldCode="DE" term="%22Vanadium+oxide%22">Vanadium oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+transitions%22">Phase transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+temperature%22">Transition temperature</searchLink><br /><searchLink fieldCode="DE" term="%22Ionic+liquids%22">Ionic liquids</searchLink><br /><searchLink fieldCode="DE" term="%22Vacancy-dislocation+interactions%22">Vacancy-dislocation interactions</searchLink><br /><searchLink fieldCode="DE" term="%22Electrostatics%22">Electrostatics</searchLink>
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  Data: Electrolyte gating with ionic liquids is a powerful tool for inducing novel conducting phases in correlated insulators. An archetypal correlated material is vanadium dioxide (VO2), which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO2 suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed. We found that electrolyte gating of VO2 leads not to electrostatically induced carriers but instead to the electric field-induced creation of oxygen vacancies, with consequent migration of oxygen from the oxide film into the ionic liquid. This mechanism should be taken into account in the interpretation of ionic liquid gating experiments. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Science (pre-March 2025) is the property of American Association for the Advancement of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1126/science.1230512
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 1402
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      – SubjectFull: Metal-insulator transitions
        Type: general
      – SubjectFull: Electrolytes
        Type: general
      – SubjectFull: Vanadium oxide
        Type: general
      – SubjectFull: Phase transitions
        Type: general
      – SubjectFull: Transition temperature
        Type: general
      – SubjectFull: Ionic liquids
        Type: general
      – SubjectFull: Vacancy-dislocation interactions
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      – SubjectFull: Electrostatics
        Type: general
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      – TitleFull: Suppression of Metal-Insulator Transition in VO2 by Electric Field—Induced Oxygen Vacancy Formation.
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            NameFull: Jaewoo Jeong
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            NameFull: Aetukun, Nagaphani
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            NameFull: Graf, Tanja
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            NameFull: Schladt, Thomas D.
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            NameFull: Samant, Mahesh G.
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              M: 03
              Text: 3/22/2013
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              Y: 2013
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