View in EDS

Ultra-thin CdS for highly performing chalcogenides thin film based solar cells.

Saved in:
Bibliographic Details
Title: Ultra-thin CdS for highly performing chalcogenides thin film based solar cells.
Authors: Sánchez, Y.1 ysanchez@irec.cat, Espíndola-Rodríguez, M.1, Xie, H.1, López-Marino, S.1, Neuschitzer, M.1, Giraldo, S.1, Dimitrievska, M.1, Placidi, M.1, Izquierdo-Roca, V.1, Pulgarín-Agudelo, F.A.2, Vigil-Galán, O.2, Saucedo, E.1
Source: Solar Energy Materials & Solar Cells. Dec2016 Part 2, Vol. 158, p138-146. 9p.
Subject Terms: *Solar cells, Cadmium selenide, Chalcogenides, Thin films, Crystal growth, Metal insulator semiconductors
Abstract: Ultra-thin CdS layers non intentionally doped and doped with Cu were grown by chemical bath deposition and applied as buffer layers for chalcogenide CuIn 1− x Ga x Se 2 and Cu 2 ZnSnSe 4 (CZTSe) based solar cells. We demonstrate that the use of Cu as dopant allows to reduce the CdS thickness below 30 nm while keeping the same efficiency levels as those obtained with conventional 70 nm in thickness undoped CdS. This is mainly explained by the improved V OC values when Cu-doped CdS is employed, obtaining voltages among the highest reported values, especially for CZTSe devices. We propose the formation of a metal–insulator–semiconductor (MIS) type device for explaining the observed experimental behavior based in indirect optoelectronic characterization of the layers and devices. This opens the possibility to use ultra-thin buffer layers for high efficiency chalcogenide based solar cells, reducing the environmental impact of the CdS buffer deposition, without detrimental impact on the optoelectronic properties of the devices. [ABSTRACT FROM AUTHOR]
Copyright of Solar Energy Materials & Solar Cells is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: GreenFILE
Description
Abstract:Ultra-thin CdS layers non intentionally doped and doped with Cu were grown by chemical bath deposition and applied as buffer layers for chalcogenide CuIn 1− x Ga x Se 2 and Cu 2 ZnSnSe 4 (CZTSe) based solar cells. We demonstrate that the use of Cu as dopant allows to reduce the CdS thickness below 30 nm while keeping the same efficiency levels as those obtained with conventional 70 nm in thickness undoped CdS. This is mainly explained by the improved V OC values when Cu-doped CdS is employed, obtaining voltages among the highest reported values, especially for CZTSe devices. We propose the formation of a metal–insulator–semiconductor (MIS) type device for explaining the observed experimental behavior based in indirect optoelectronic characterization of the layers and devices. This opens the possibility to use ultra-thin buffer layers for high efficiency chalcogenide based solar cells, reducing the environmental impact of the CdS buffer deposition, without detrimental impact on the optoelectronic properties of the devices. [ABSTRACT FROM AUTHOR]
ISSN:09270248
DOI:10.1016/j.solmat.2015.12.037