Advanced Cu chemical displacement technique for SiO-based electrochemical metallization ReRAM application.

Saved in:
Bibliographic Details
Title: Advanced Cu chemical displacement technique for SiO-based electrochemical metallization ReRAM application.
Authors: Chin, Fun-Tat1, p9751556@fcu.edu.tw, Lin, Yu-Hsien2, yhlin@nuu.edu.tw, You, Hsin-Chiang3, hcyou@ncut.edu.tw, Yang, Wen-Luh4, wlyang@fcu.edu.tw, Lin, Li-Min1, nash67.lin@msa.hinet.net, Hsiao, Yu-Ping1, heavenxaw11@yahoo.com.tw, Ko, Chum-Min4, abc951258@gmail.com, Chao, Tien-Sheng5, tschao@mail.nctu.edu.tw
Source: Nanoscale Research Letters; Dec2014, Vol. 9 Issue 1, p1-6, 6p
Database: Applied Science & Technology Source
Description
ISSN:19317573
DOI:10.1186/1556-276X-9-592