Advanced Cu chemical displacement technique for SiO-based electrochemical metallization ReRAM application.
Saved in:
| Title: | Advanced Cu chemical displacement technique for SiO-based electrochemical metallization ReRAM application. |
|---|---|
| Authors: | Chin, Fun-Tat1, p9751556@fcu.edu.tw, Lin, Yu-Hsien2, yhlin@nuu.edu.tw, You, Hsin-Chiang3, hcyou@ncut.edu.tw, Yang, Wen-Luh4, wlyang@fcu.edu.tw, Lin, Li-Min1, nash67.lin@msa.hinet.net, Hsiao, Yu-Ping1, heavenxaw11@yahoo.com.tw, Ko, Chum-Min4, abc951258@gmail.com, Chao, Tien-Sheng5, tschao@mail.nctu.edu.tw |
| Source: | Nanoscale Research Letters; Dec2014, Vol. 9 Issue 1, p1-6, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 19317573 |
|---|---|
| DOI: | 10.1186/1556-276X-9-592 |