Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy.

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Bibliographic Details
Title: Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy.
Authors: Browne, David A.1, Mazumder, Baishakhi1,2, Yuh-Renn Wu3, Speck, James S.1
Source: Journal of Applied Physics; 2015, Vol. 117 Issue 18, p185703-1-185703-9, 9p, 2 Diagrams, 12 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.4919750