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Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy.

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Title: Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy.
Authors: Browne, David A.1, Mazumder, Baishakhi1,2, Yuh-Renn Wu3, Speck, James S.1
Source: Journal of Applied Physics; 2015, Vol. 117 Issue 18, p185703-1-185703-9, 9p, 2 Diagrams, 12 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 102706660
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 2015, Vol. 117 Issue 18, p185703-1-185703-9, 9p, 2 Diagrams, 12 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=102706660
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.4919750
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 9
        StartPage: 185703-1
    Titles:
      – TitleFull: Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy.
        Type: main
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            NameFull: Browne, David A.
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            NameFull: Mazumder, Baishakhi
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            NameFull: Yuh-Renn Wu
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            NameFull: Speck, James S.
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            – D: 14
              M: 05
              Text: 2015
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              Y: 2015
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              Value: 00218979
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              Value: 117
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              Value: 18
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            – TitleFull: Journal of Applied Physics
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