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Fully Programmable Memory BIST for Commodity DRAMs.

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Bibliographic Details
Title: Fully Programmable Memory BIST for Commodity DRAMs.
Authors: Ilwoong Kim1, woong@soc.yonsei.ac.kr, Woosik Jeong2, woosik.jeong@sk.com, Dongho Kang1, fourier2@soc.yonsei.ac.kr, Sungho Kang1, shkang@yonsei.ac.kr
Source: ETRI Journal; Aug2015, Vol. 37 Issue 4, p787-792, 6p
Database: Applied Science & Technology Source
Description
ISSN:12256463
DOI:10.4218/etrij.15.0115.0040